Difference between revisions of "Milestone-Proposal talk:High Electron Mobility Transistor, HEMT, 1979"

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===Re: Citation -- [[User:Nh|Nh]] ([[User talk:Nh|talk]]) 09:12, 13 September 2018 (UTC)===
 
===Re: Citation -- [[User:Nh|Nh]] ([[User talk:Nh|talk]]) 09:12, 13 September 2018 (UTC)===
  
: Replace this text with your reply
 
  
 
Dear Janina,  
 
Dear Janina,  
I modified the text to clarify the difference between HBT (hetero-junction bipolar transistor) or MOS transistor.  
+
I modified the text as follows to clarify the difference between HBT (hetero-junction bipolar transistor) or MOS transistor.  
 
Regards,
 
Regards,
  
 
High Electron Mobility Transistor, HEMT, 1979
 
High Electron Mobility Transistor, HEMT, 1979
 
The HEMT, invented in 1979, was the first transistor to incorporate an interface between two semiconductor materials with different energy gaps. HEMT proved superior to previous transistor technologies due to high mobility of channel carriers, resulting in high speed and high frequency performance. HEMTs have been widely used in radio telescopes, satellite broadcasting receivers and cellular base stations, giving rise to a fundamental technology supporting the information and communication society.
 
The HEMT, invented in 1979, was the first transistor to incorporate an interface between two semiconductor materials with different energy gaps. HEMT proved superior to previous transistor technologies due to high mobility of channel carriers, resulting in high speed and high frequency performance. HEMTs have been widely used in radio telescopes, satellite broadcasting receivers and cellular base stations, giving rise to a fundamental technology supporting the information and communication society.

Revision as of 04:13, 14 September 2018

-- JaninA (talk) 01:04, 7 February 2018 (UTC)[edit | reply | new]

Dear Proposer,

I just been appointed as the advocate for this milestone. I am of the opinion that the HEMT definitely deserves the Milestone. I read the proposal and I found it very well written. My only recommendations are possibly: to re-arrange Section 1, and to add some quantitive parameters in the body of the proposal (parameters, current HEMT market in $, etc).

Sincerely

Janina Mazierska

Re: -- Nh (talk) 07:34, 13 July 2018 (UTC)[edit | reply | new]

Dear Janina,

Thank you very much for your valuable advice. I added some quantitative parameters in the body of the proposal.

Sincerely

Proposer

Expert Opinion from Giovanni Ghione Editor of IEEE Transactions on Electronic Devices (five emails) -- JaninA (talk) 03:45, 13 June 2018 (UTC)[edit | reply | new]

From: Mazierska, Janina [1] Sent: Monday, February 12, 2018 12:48 To: giovanni.ghione@polito.it Subject: Re: IEEE Milestone: HEMT, 1979

Dear Giovanni,

Thank you very much for the three names of experts on HEMTs!

If our paths cross I will buy you a beer, as they say in Australia. Or better a glass of wine taking you being from Italy ☺ ☺ ☺.

Kind regards

Janina

From: Giovanni Ghione <giovanni.ghione@polito.it> Organization: Politecnico di Torino - DET Reply-To: "giovanni.ghione@polito.it" <giovanni.ghione@polito.it> Date: Friday, February 9, 2018 at 5:30 PM To: "Mazierska, Janina" <janina.mazierska@jcu.edu.au> Subject: RE: IEEE Milestone: HEMT, 1979

Dear Janina: Here is a number of people involved in HEMT development (early and GaN-based in more recent years): Prof. Umesh Mishra mishra@ece.ucsb.edu Prof. Hadis Morkoç hmorkoc@vcu.edu . Another colleague well proficient in the history of III-V and III-N devices is prof. Frank Schwierz frank.schwierz@tu-ilmenau.de . I understand the point made by Fujitsu – they really were the first real players in the HEMT field. Sincerely – G.

prof. Giovanni Ghione Fellow, IEEE Politecnico di Torino, Dipartimento di Elettronica e Telecomunicazioni Corso Duca degli Abruzzi 24 10129 TORINO, Italy Phone +39 011 090 4064 Fax +39 011 090 4099 email giovanni.ghione@polito.it http://scholar.google.com/scholar?q=author:g-ghione

From: Mazierska, Janina [2] Sent: Friday, February 09, 2018 06:19 To: giovanni.ghione@polito.it Subject: Re: IEEE Milestone: HEMT, 1979

Dear Giovanni,

wow, such a quick response, thank you very much :) :) :). It will be great to have a Milestone for HEMT as there are only six Milestones related to Electron Devices and Semiconductor technologies out of over 185……

I also researched the topic of the Fujitsu-Thomson-Bell Labs competition, when I was allocated this Milestone as the advocate. See attached. (And yes, the proposal is from Tokyo Section, with the Milestone plague to be at Fujitsu labs).

At the end, after reading what the Thomson guy (Nuyen T. Linh) wrote on the Internet in 2008 (that Japaneses beat the Thomson team in obtaining experimental results by few months) I think that Fujitsu deserves the plague. And the Fujitsu was also the first to publish a paper. Not to mention that, as you wrote, Fujitsu was the main industrial developer of HEMTs. Also, there was no proposal from the French Section for “HEMTs" for the Thomson development...

For any case I will raise the matter at the History Committee meeting, but I think it should be fine.

I might need an opinion of a second expert though, in respect to the HEMT development itself. Whom would you recommend to contact?

Cheers

Janina



On Feb 7, 2018, at 6:40 PM, Giovanni Ghione <giovanni.ghione@polito.it> wrote:

Dear Janina: I completely agree that the HEMT (High Electron Mobility Transistor) is a milestone in the field of high-frequency electronics. It is today the dominant device in GaAs based integrated circuits, and it is also the main device in GaN high-power microwave integrated circuits. I see the request in the form comes from Fujitsu, correct? My only perplexity (see [1], Chapter 14, that I co-authored) is that the HEMT was almost simultaneousy proposed by Fujitsu [2] and by Thomson-CSF Central Research Laboratories [3] in 1980. I do not know if this has any impact on the milestone procedure – certainly Fujitsu was a main industrial developer in the following years. Please let me know if you need more details. Sincerely – G.


[1] Burghartz, Joachim N. Guide to State-of-the-art Electron Devices. John Wiley & Sons, 2013. [2] T. Mimura, S. Hiyamizu, T. Fujii and K. Nanbu, “A New Field-Effect Transistor with Selectively Doped GaAs/n-AlxGa1-xAs Heterojunctions,” Jpn. J. Appl. Phys. 19, pp. L225-L227, 1980 [3] D. Delagebeaudeuf, P. Delescluse, P. Etienne, M. Laviron, J. Chaplart, Nuyen T. Linh, “Two-dimensional electron gas m.e.s.f.e.t. structure,” Electronics Letters, vol.16, no.17, pp.667 – 668, August 14 1980

prof. Giovanni Ghione Fellow, IEEE Politecnico di Torino, Dipartimento di Elettronica e Telecomunicazioni Corso Duca degli Abruzzi 24 10129 TORINO, Italy Phone +39 011 090 4064 Fax +39 011 090 4099 email giovanni.ghione@polito.it http://scholar.google.com/scholar?q=author:g-ghione

From: Mazierska, Janina [3] Sent: Wednesday, February 07, 2018 03:02 To: giovanni.ghione@polito.it Subject: IEEE Milestone: HEMT, 1979

Dear Professor Ghione,

As a senior IEEE volunteer you are well familiar with the IEEE Milestones, awards that represent key historical achievements in electrical and electronic engineering.

Recently a Milestone nomination was submitted for “High Electron Mobility Transistor, HEMT, 1979” to the IEEE History Committee, and I was allocated a job to be an Advocate for this Milestone. I am seeking your opinion, as the expert in the field of Electron Devices, whether the HEMT Transistor deserves such the IEEE Milestone, ad whether the nomination describes well the contribution of Fujitsu Laboratories.

I am aware that you are a very busy person but I hope you will find time to give me your short opinion in this prestigious matter ☺. Your contribution would be greatly appreciated by the IEEE History Committee.


Kind Regards

Janina Mazierska Member of the IEEE 2018 History Committee IEEE Director of Region 10 (2007-2008)

Citation -- JaninA (talk) 02:14, 12 September 2018 (UTC)[edit | reply | new]

“Dear Proposer-san, I am planning to propose to the History Committee that the HEMT Milestone is considered at the October meeting. To make the discussion smoother it would be good to make the citation for the HEMT Milestone stronger. I wonder if the text below is acceptable to you and the Section. Please let me know asap. Kind regards Janina

TEXT ON THE PLAGUE High Electron Mobility Transistor, HEMT, 1979 The HEMT, invented in 1979, was the first transistor to incorporate a junction between two materials with different energy gaps. HEMT proved superior to previous transistor technologies due to high mobility of channel carriers, resulting in high speed and high frequency performance. HEMTs have been widely used in radio telescopes, satellite broadcasting receivers and cellular base stations, giving rise to a fundamental technology supporting the information and communication society"

Re: Citation -- Nh (talk) 09:12, 13 September 2018 (UTC)[edit | reply | new]

Dear Janina, I modified the text as follows to clarify the difference between HBT (hetero-junction bipolar transistor) or MOS transistor. Regards,

High Electron Mobility Transistor, HEMT, 1979 The HEMT, invented in 1979, was the first transistor to incorporate an interface between two semiconductor materials with different energy gaps. HEMT proved superior to previous transistor technologies due to high mobility of channel carriers, resulting in high speed and high frequency performance. HEMTs have been widely used in radio telescopes, satellite broadcasting receivers and cellular base stations, giving rise to a fundamental technology supporting the information and communication society.